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论文类型：期刊论文

发表时间：2011-12-01

发表刊物：APPLIED SURFACE SCIENCE

收录刊物：Scopus、SCIE、EI

卷号：258

期号：4

页面范围：1619-1623

ISSN号：0169-4332

关键字：Ge2Sb2Te5; Crystallization; AFM; Raman spectroscopy; Temperature control

摘要：Using in situ atomic force microscope (AFM) and Raman spectroscopy, the real-time crystallization properties of Ge2Sb2Te5 films at different temperature were characterized. The given AFM topograph and phase images revealed that the structure of amorphous Ge2Sb2Te5 films began to change at a temperature of as low as 100 degrees C. When the temperature reached 130 degrees C, some crystal fragments had formed at the film surface. Heating up to 160 degrees C, the size of the visible crystal fragments increased, but decreased at a higher temperature of 200 degrees C. When the Ge2Sb2Te5 film was cooled down to room temperature (RT) from 200 degrees C, the crystal fragments divided into crystal grains due to the absence of heating energy. The Raman spectra at different temperature further verified the structure evolution of the Ge2Sb2Te5 film with temperature. This work is of significance for the preparation of Ge2Sb2Te5 films and the erasing of data. (C) 2011 Elsevier B.V. All rights reserved.