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Date of Publication:2008-01-01

Journal:Journal of Chinese Electronic Microscopy Society

Volume:27

Issue:4

Page Number:287-292

ISSN No.:1000-6281

Key Words:"sapphire; ion implantation; transmission electron microscopy; coincidence of reciprocal lattice points method"

CN No.:11-2295

Abstract:Fe ions were implanted into alpha-Al_2O_3. single crystals （sapphire） at energy, of 50 keV to a dose of 1*10~(17) ions/cm~2 at room temperature. The mierostructure in the implanted region was studied by transmission electron microscopy. With annealing in a reducing atmosphere, the implanted Fe ions precipitate as the alpha-Fe particles. Some alpha-Fe particles are attached to voids. The large iron particles greater than 20 nm and some voids clearly have faceted outlines. Most of the alpha-Fe particles have the orientation relationship （OR） of （ 111 ）_(alpha-Fe)// （0001）_(sapphire). and[ 1 1~-0]_(alpha-Fe)//[ 11 2~-0]_(sapphire) with sapphire. Only a small quantity of the alpha-Fe particles have the deviation from this OR and the maximum deviation is less than 3°. This OR is predicted precisely by the method of coincidence of reciprocal lattice points. Another OR of （110）_(alpha-Fe)//（0001）_(sapphire) and 〈 111 〉_(alpha-Fe)// 〈 5 1~- 4~-0 〉_( sapphire) reported before is confirmed to be secondary preferred orientation in the alpha-Fe/ sapphire system.

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