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论文类型：期刊论文

发表时间：2016-08-01

发表刊物：CRYSTAL GROWTH & DESIGN

收录刊物：SCIE、EI、Scopus

卷号：16

期号：8

页面范围：4272-4277

ISSN号：1528-7483

摘要：Single-crystal films are at the foundation of a number of advanced technologies, such as for devices related to microelectronics, optoelectronics, spintronics, and superconducting electronics. In this study, high-temperature annealing was used to rehabilitate the MgO(001) surface to improve the crystallinity of highly epitaxial LaBaCo2O5+delta (LBCO) films, which have demonstrated potential for applications in fast gas sensors. In comparison with the LBCO film grown on the as received substrate, solid evidence is presented to support that the rehabbed substrates facilitate deposition of single-crystal LBCO films by radio frequency magnetron sputtering at the optimized conditions. Thus, substrate annealing is demonstrated to be a practical and effective method for rehabbing the damaged surface of a substrate induced by manufacture and surface milling and is promising for a range of important applications based on the growth of single-crystal films.