|
个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：复旦大学
学位：博士
所在单位：物理学院
学科：凝聚态物理
办公地点：大连理工大学三束材料改性重点实验室1号楼203房间
联系方式：qyzhang@dlut.edu.cn 0411-84707930 转 13
电子邮箱：qyzhang@dlut.edu.cn
Bright luminescence in amorphous hydrogenated silicon-nitride quantum-dot films prepared by a special designed PECVD system
点击次数：
论文类型：期刊论文
发表时间：2016-07-01
发表刊物：JOURNAL OF LUMINESCENCE
收录刊物：SCIE、EI、Scopus
卷号：175
页面范围：67-70
ISSN号：0022-2313
关键字：Amorphous silicon-nitride; Quantum dot; Photoluminescence
摘要：Amorphous hydrogenated silicon-nitride (alpha-SiNx:H) quantum-dot (QD) films were successfully deposited on Si substrates using a specially designed system of plasma enhanced chemical vapor deposition. The alpha-SiNx:H QD films exhibit strong visible photoluminescence (PL) with a tunable peak energy ranging from 3.26 to 2.52 eV, depending on the deposition pressure. The PL process was studied in terms of temperature-dependent and time-resolved PL spectra in comparison with the theoretical predication of the band-tail luminescence, and then the tunable PL spectra were assigned to the recombination of excitons in the localized states at the band tails of the alpha-SiNx:H QDs. (C) 2016 Elsevier B.V. All rights reserved.