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论文类型：期刊论文

发表时间：2012-03-01

发表刊物：PLASMA SCIENCE & TECHNOLOGY

收录刊物：SCIE、EI、Scopus

卷号：14

期号：3

页面范围：240-244

ISSN号：1009-0630

关键字：ion behavior; plasma sheath; Monte-Carlo; rf; photoresist trench

摘要：Ion's behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency (rf) source, the Laplace equation is solved to obtain the electric potential. The ion trajectories and the ion energy distribution (IED) at the bottom of the trench are obtained self-consistently by tracking the ions in the trench. The results show that the aspect ratio of depth- to-width of the photoresist trench and the voltage amplitude of the rf source applied to the electrode are important parameters. The larger the aspect ratio and the smaller the amplitude are, the more ions hit the sidewalls, which results in a notching phenomenon. Meanwhile, there are a higher high-energy peak and a lower low-energy peak in the IED with the increase in aspect ratio.