金仁成

个人信息Personal Information

副教授

硕士生导师

性别:男

毕业院校:吉林工业大学

学位:博士

所在单位:机械工程学院

学科:机械制造及其自动化. 机械电子工程. 测试计量技术及仪器

办公地点:机械工程学院知方楼6025

联系方式:rcjin@dlut.edu.cn

电子邮箱:rcjin@dlut.edu.cn

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Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator

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论文类型:期刊论文

发表时间:2009-01-01

发表刊物:Journal of Semiconductors

收录刊物:EI、CSCD、Scopus

卷号:30

期号:10

页面范围:59-62

ISSN号:1674-4926

摘要:According to Lambert's law, a novel structure of photodetectors, namely photodetectors in silicon-on-insulator, is proposed. By choosing a certain thickness value for the SOI layer, the photodetector can absorb blue/violet light effectively and affect the responsivity of the long wavelength in the visible and near-infrared region, making a blue/violet filter unnecessary. The material of the SOI layer is high-resistivity floating-zone silicon which can cause the neutral N type SOI layer to become fully depleted after doping with a P type impurity. This can improve the collection efficiency of short-wavelength photogenerated carriers. The device structure was optimized through numerical simulation, and the results show that the photodiode is a kind of high performance photodetector in the blue/violet region. ? 2009 Chinese Institute of Electronics.