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论文类型：期刊论文

发表时间：2014-01-01

发表刊物：JOURNAL OF LUMINESCENCE

收录刊物：SCIE、EI

卷号：145

页面范围：208-212

ISSN号：0022-2313

关键字：Sb/P co-doping; GaN; Nanowires; Synthesis; Cathodoluminescence

摘要：Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga2O3 and Sb powders in NH3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. (C) 2013 Elsevier B.V. All rights reserved.