张贵锋

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:西北工业大学

学位:博士

所在单位:材料科学与工程学院

电子邮箱:gfzhang@dlut.edu.cn

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Synthesis, Microstructure, and Cathodoluminescence of [0001]-Oriented GaN Nanorods Grown on Conductive Graphite Substrate

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论文类型:期刊论文

发表时间:2013-11-27

发表刊物:ACS APPLIED MATERIALS & INTERFACES

收录刊物:SCIE、EI、PubMed、Scopus

卷号:5

期号:22

页面范围:12066-12072

ISSN号:1944-8244

关键字:GaN; nanorods; graphite; crystallography; cathodoluminescence

摘要:One-dimensional GaN nanorods with corrugated morphology have been synthesized on graphite substrate without the assistance of any metal catalyst through a feasible thermal evaporation process. The morphologies and microstructures of GaN nanorods were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results from HRTEM analysis indicate that the GaN nanorods are well-crystallized and exhibit a preferential orientation along the [0001] direction with Ga3+-terminated (<10(1)over bar1> and N3--terminated (10 (11) over bar) as side facets, finally leading to the corrugated morphology surface. The stabilization of the electrostatic surface energy of [10 (1) over bar1) polar surface in a wurtzite-type hexagonal structure plays a key role in the formation of GaN nanorods with corrugated morphology. Room-temperature cathodolurninescence (CL) measurements show a near-band-edge emission (NBE) in the ultraviolet range and a broad deep level emission (DLE) in the visible range. The crystallography and the optical emissions of GaN nanorods are discussed.