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Indexed by:Journal Papers

Date of Publication:2015-07-01

Journal:SURFACE ENGINEERING

Included Journals:SCIE、EI、Scopus

Volume:31

Issue:7

Page Number:534-539

ISSN No.:0267-0844

Key Words:GaN films; ITO substrates; N-2 flux; Low temperature deposition; ECR-PEMOCVD

Abstract:GaN films have been fabricated on tin doped indium oxide (ITO) coated glass substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapour deposition. Trimethyl gallium (TMGa) and N-2 were acted as precursors of Ga and N respectively. A GaN buffer layer was introduced to reduce the internal stress between the substrate and the GaN films. Then, the deposition process was performed in N-2 rich atmosphere at a constant substrate temperature as low as 460 degrees C. The TMGa flowrate was fixed at 1.5 sccm and N-2 flowrate varies from 80 to 110 sccm to investigate the influence of N-2 flux rates on the films' properties. Reflection high energy electron diffraction and X-ray diffraction results indicate that all deposits are highly c axis oriented, whereas the characteristics of photoluminescence spectra are strongly affected by the N-2 flowrates. GaN films prepared at 100 sccm has a smooth surface and exhibits the optimal illumination performance. This inexpensive GaN/ITO/glass structure has potential application in optoelectronic devices.