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Indexed by:期刊论文

Date of Publication:2011-01-21

Journal:VACUUM

Included Journals:SCIE、EI

Volume:85

Issue:7

Page Number:725-729

ISSN No.:0042-207X

Key Words:GaN films; Diamond films; SAW devices; ECR-PEMOCVD

Abstract:High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma-enhanced metal organic chemical vapour deposition (ECR-PEMOCVD). Trimethyl gallium (TMGa) and N-2 are applied as precursors and different N-2 fluxes are used to achieve high-quality GaN films. The influence of N-2 flux on the properties of GaN films is systematically investigated by X-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and Hall effect measurement (HL). The results show that the high-quality GaN films with small surface roughness of 4.5 nm and high c-orientation are successfully achieved at the optimized N-2 flux of 90 sccm. The most significant improvements in morphological, structural, and optical properties of GaN films are obtained by using a proper N-2 flux. (c) 2010 Elsevier Ltd. All rights reserved.