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Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

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Date of Publication:2022-10-08

Journal:Chinese Physics Letters

Volume:25

Issue:12

Page Number:4345-4347

ISSN No.:0256-307X

Pre One:Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure

Next One:Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO/p-ZnO : As/GaAs structure
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