Current position: Home >> Scientific Research >> Patents

具有纵向栅极结构的常关型HEMT器件

Hits:

First Author:huanghuolin

Disigner of the Invention:孙仲豪,lianghongwei,xiaxiaochuan,duguotong,Jiming Bian,hulizhong

Affilication of Author(s):光电工程与仪器科学学院

Application Number:CN205508826U

Authorization number:CN201620147905.6

Pre One:AlN/GaN/自持金刚石结构SAW器件及制备方法

Next One:高氟含量水性氟聚合物乳液及其制备方法
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep