Current position: Home >> Scientific Research >> Patents

一种碳化硅非晶纳米线拉断后的自愈合方法

Hits:

First Author:zhangzhenyu

Disigner of the Invention:崔俊峰,陈雷雷,Dongming Guo

Application Number:CN201711094048.3

Authorization Date:2017-11-09

Authorization number:CN107991181A

Pre One:一种碳化硅单晶纳米线拉断后的自愈合方法

Next One:一种II-VI族软脆晶体研磨抛光方法