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Indexed by:期刊论文

Date of Publication:2010-12-01

Journal:JOURNAL OF LUMINESCENCE

Included Journals:SCIE、EI、Scopus

Volume:130

Issue:12

Page Number:2293-2297

ISSN No.:0022-2313

Key Words:ErF3; Near infrared; Electroluminescence

Abstract:Near-infrared (NIR) organic light-emitting devices (OLEDs) are demonstrated by employing erbium fluoride (ErF3)-doped tris-(8-hydroxyquinoline) aluminum (Alq(3)) as the emitting layer. The device structure is ITO/N,N'-di-1-naphthyl-N,N'-diphenylbenzidine (NPB)/Alq(3): ErF3/2,2',2 ''-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole) (TPBI)/Alq(3)/Al. Room-temperature electroluminescence around 1530 nm is observed due to the I-4(13/2)-I-4(15/2) transition of Er3+ Full width at half maximum (FWHM) of the electroluminescent (EL) spectrum is similar to 50 nm. NIR EL intensity from the ErF3-based device is similar to 4 times higher than that of Er(DBM)(3)Phen-based device at the same current. Alq(3)-ErF3 composite films are investigated by the measurements of X-ray diffraction (XRD), absorption, photoluminescence (PL) and PL decay time. Electron-only devices are also fabricated. The results indicate that energy transfer mechanism and charge trapping mechanism coexist in the NIR EL process. (C) 2010 Elsevier B.V. All rights reserved.