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Indexed by:期刊论文

Date of Publication:2009-11-25

Journal:CHEMICAL RESEARCH IN CHINESE UNIVERSITIES

Included Journals:SCIE、ISTIC、Scopus

Volume:25

Issue:6

Page Number:786-790

ISSN No.:1005-9040

Key Words:Transparent electrode; Near-infrared(NIR); Organic light-emitting diode(OLED)

Abstract:The optical transmission(200-2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Omega/square), ITO(12 Omega/square), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were investigated. Near-infrared organic light-emitting diodes(NIR-OLEDs) emitting around 1.54 mu m based on Er(DBM)(3)Phen with ITO(100 Omega/square), ITO(12 Omega/square) and PANI as anodes, respectively, were fabricated. The device structure was anode/4 ''-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine(m-MTDATA)/N,N'-di-1-naphthyl-N,N'-diphenylbenzidine(NPB)/Er(DBM)(3)Phen/tris-(8-hydroxyquinoline) aluminum(Alq(3))/Al. The results suggest that the performance of NIR-OLEDs with ITO(100 Omega/square), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO(12 Omega/square) and PANI as anodes, respectively. The high NIR transmittance of ITO(100 Omega/square) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO(100 Omega/square) are another reasons.