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论文类型：期刊论文

发表时间：2021-01-10

发表刊物：CHINESE PHYSICS LETTERS

卷号：37

期号：10

ISSN号：0256-307X

关键字：84; 60; Jt; 85; 30; De

摘要：We fabricated Sb(2)Se(3)thin film solar cells using tris(8-hydroxy-quinolinato) aluminum (Alq(3)) as an electron transport layer by vacuum thermal evaporation. Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB) was used as a hole transport layer. We took ITO/NPB/Sb2Se3/Alq(3)/Al as the device architecture. An open circuit voltage (V-oc) of 0.37 V, a short circuit current density (J(sc)) of 21.2 mA/cm(2), and a power conversion efficiency (PCE) of 3.79% were obtained on an optimized device. A maximum external quantum efficiency of 73% was achieved at 600 nm. TheJ(sc),V-oc, and PCE were dramatically enhanced after introducing an electron transport layer of Alq(3). The results suggest that the interface state density at Sb2Se3/Al interface is decreased by inserting an Alq(3)layer, and the charge recombination loss in the device is suppressed. This work provides a new electron transport material for Sb(2)Se(3)thin film solar cells.