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论文类型：期刊论文

发表时间：2013-09-01

发表刊物：Gaodianya Jishu/High Voltage Engineering

收录刊物：EI、PKU、ISTIC、Scopus

卷号：39

期号：9

页面范围：2228-2234

ISSN号：10036520

摘要：To improve the microcrystalline silicon thin film deposition in quality and to increase its microcrystalline silicon content, we numerically investigated the characteristics of homogeneous discharges in hydrogen diluted silane and argon mixed gases at atmospheric pressure using a two-dimensional fluid model. The model takes into account the primary processes of excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges, so this model can adequately describe the discharge plasma. The effects of very high frequency (VHF) excitation on the electron density in such discharges are analyzed. The simulation results show that the electron density does not linearly vary with the excitation frequency within from 90 MHz to 150 MHz. The maximum value occurs at an appropriate excitation frequency i.e. called the transition frequency. Increase of the excitation frequency would effectively increase the electron density before the transition frequency, but decreases the density afterwards. The electron density is very important for the film growth. Moreover, the densities of involved particle species, including H2+, H, Ar*, Ar+, SiH3+, SiH3-, SiH3, SiH2 are closely interrelated.