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个人信息Personal Information
教授
博士生导师
硕士生导师
主要任职：光电工程与仪器科学学院副院长
其他任职：Faculty director of Instrumentation Science
性别：男
毕业院校：日本富山大学
学位：博士
所在单位：光电工程与仪器科学学院
学科：微电子学与固体电子学. 测试计量技术及仪器
办公地点：研究生教育大楼 708
联系方式：chen_xm@dlut.edu.cn 0411-84706660
电子邮箱：chen_xm@dlut.edu.cn
Impact of Side Reservoir on Electromigration of Copper Interconnects
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论文类型：会议论文
发表时间：2017-01-01
收录刊物：EI、CPCI-S、Scopus
卷号：2017-January
页面范围：1-2
关键字：electromigration; side reservoir; finite element method; copper interconnect
摘要：Side reservoir can improve electromigration (EM) lifetime of copper interconnects. In this work, finite element method (FEM) simulations for interconnect structures with cathode end-of-line reservoir and side reservoir respectively have been conducted to study the side reservoir effects on EM lifetime. It is demonstrated that side location is most likely to have void failure and side reservoir can move the maximum atomic flux divergence (AFD) sites from above via location to side reservoir location so that it can improve EM lifetime. The root cause for this improvement is that side reservoir can impede stress built-up at above via location.