Current position: Home >> Scientific Research >> Research Projects

高耐压、低损耗的Si衬底Ga2O3 MOSFET器件制备研究

Hits:

Leading Scientist:柳阳

Project Participants:xiaxiaochuan,lianghongwei,Shen Rensheng

Supported by:国家自然科学基金项目

Sub-Class of Project:面上项目

Status:结题

Supported by:国家自然科学基金委员会

Nature of Project:纵向

Project Approval Number:61774072

Date of Project Approval:2017-08-17

Scheduled completion time:2021-12-31

Date of Project Initiation:2022-03-29

Pre One:稀土掺杂发光材料温度依赖的发光性质研究

Next One:大功率白光LED封装用玻璃荧光体的研究