Hits:
First Author:陈远鹏
Disigner of the Invention:xiaxiaochuan,liuyang,Shen Rensheng,lianghongwei
Authorization number:ZL.201310399590.5
Pre One:一种基于氧化镓单晶的辐射探测器及其制备方法
Next One:掺杂氧化镓膜的制备方法及掺杂氧化镓膜