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在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜

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First Author:xiaxiaochuan

Disigner of the Invention:liuyang,Shen Rensheng,lianghongwei,duguotong,hulizhong

Application Number:CN201310401102.X

Authorization Date:2013-09-05

Authorization number:CN103456603A

Next One:一种氧化镓外延膜的制备方法及氧化镓外延膜
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