论文成果
Effect of melt flow rate and S/L interface on the P horizontal distribution in silicon
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  • 发表时间:2022-10-02
  • 发表刊物:VACUUM
  • 所属单位:材料科学与工程学院
  • 文献类型:J
  • 卷号:190
  • ISSN号:0042-207X
  • 关键字:"Melt flow; Solid-liquid interface; n-type silicon; Doping control"

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