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Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films
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论文类型: 期刊论文
发表时间: 2019-10-21
发表刊物: JOURNAL OF APPLIED PHYSICS
收录刊物: EI、SCIE
卷号: 126
期号: 15
ISSN号: 0021-8979
摘要: Ferroelectricity in calcium doped hafnium oxide (Ca:HfO2) thin films has been experimentally proved for the first time in this work. All films prepared by chemical solution deposition exhibited smooth and crack-free surfaces, which were observed using an atomic force microscope. After 10(4) field cycling, a maximum remanent polarization of 10.5 mu C/cm(2) was achieved in HfO2 films with 4.8 mol. % Ca content. Meanwhile, the breakdown of the film occurred after 7 x 10(6) electric cycles. A phase transition from the monoclinic phase to cubic/orthorhombic phases was observed with increasing Ca concentration. We suggest the change in oxygen vacancy concentration as the origin of phase evolution, which was confirmed by X-ray photoelectron spectroscopy analysis. These results open a new pathway for realizing ferroelectricity in HfO2-based films. Published under license by AIP Publishing.

赵秀明

工程师

性别: 女

毕业院校:大连理工大学

学位: 博士

所在单位:盘锦校区分析测试中心

电子邮箱:xmzhao@dlut.edu.cn

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