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论文类型：期刊论文

发表时间：2012-04-01

发表刊物：PHILOSOPHICAL MAGAZINE LETTERS

收录刊物：SCIE、EI

卷号：92

期号：4

页面范围：188-193

ISSN号：0950-0839

关键字：nanoindentation; CdZnTe; nanocrystalline deformed layer; hardness; semiconductors

摘要：Nanocrystalline deformed layers were generated in cadmium zinc telluride (CZT) single crystals by nanogrinding using three different grit sizes. The mechanical properties of the deformed layers were measured using nanoindentation. The hardness of the deformed nanocrystalline layers in the soft-brittle CZT semiconductor was higher than that of the perfect single crystal. This result is different from those found for deformed layers of hard-brittle silicon semiconductors, where the hardness of the deformed layers is lower than those of the perfect single crystal.