边继明

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教授

博士生导师

硕士生导师

性别:男

毕业院校:中科院上海硅酸盐研究所

学位:博士

所在单位:物理学院

学科:微电子学与固体电子学. 凝聚态物理

办公地点:大连理工大学科技园C座301-1办公室

联系方式:E-mail:jmbian@dlut.edu.cn.

电子邮箱:jmbian@dlut.edu.cn

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Zinc oxide thin films with reduced native compensative defects grown by ultrasonic spray pyrolysis at atmosphere

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论文类型:会议论文

发表时间:2007-01-01

收录刊物:CPCI-S

卷号:336-338

页面范围:589-+

关键字:spray pyrolysis; zinc oxide film; p-type doping

摘要:ZnO films were deposited on Si (100) Substrate by ultrasonic spray pyrolysis at atmosphere. The film grown at optimum conditions is well crystallized with uniform, smooth and dense microstructure. Photoluminescence measurement shows a strong near band edge UV emission at 379nm and an almost undetectable deep-level emission band centered at 502nm. The resistivity of ZnO film is reduced by an order after N-In codoping, which produces p-type conduction with high hole concentration and hall mobility.