王德君

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:清华大学

学位:博士

所在单位:控制科学与工程学院

学科:微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程

电子邮箱:dwang121@dlut.edu.cn

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Wafer-Level Hermetic Package by Low-Temperature Cu/Sn TLP Bonding with Optimized Sn Thickness

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论文类型:期刊论文

第一作者:Wu, Zijian

通讯作者:Cai, J (reprint author), Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China.; Cai, J (reprint author), Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China.

合写作者:Cai, Jian,Wang, Qian,Wang, Junqiang,Wang, Dejun

发表时间:2017-10-01

发表刊物:JOURNAL OF ELECTRONIC MATERIALS

收录刊物:Scopus、SCIE、EI

卷号:46

期号:10

页面范围:6111-6118

ISSN号:0361-5235

关键字:Wafer-level package; hermetic sealing; Cu/Sn TLP bonding; intermetallic compound; aging test

摘要:In this paper, a wafer-level package with hermetic sealing by low-temperature Cu/Sn transient liquid phase (TLP) bonding for a micro-electromechanical system was introduced. A Cu bump with a Sn cap and sealing ring were fabricated simultaneously by electroplating. The model of Cu/Sn TLP bonding was established and the thicknesses of Cu and Sn were optimized after a series of bonding experiments. Cu/Sn wafer-level bonding was undertaken at 260A degrees C for 30 min under a vacuum condition. An average shear strength of 50.36 MPa and a fine leak rate of 1.9 x 10(-8) atm cc/s were achieved. Scanning electron microscope photos of the Cu/Sn/Cu interlayers were presented, and energy dispersive x-ray analysis was conducted simultaneously. The results showed that the Sn was completely consumed to form the stable intermetallic compound Cu3Sn. An aging test of 200 h at 200A degrees C was conducted to test the performance of the hermetic sealing, while the results of shear strength, fine leak rate and bonding interface were also set out.