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论文类型：会议论文

发表时间：2018-01-01

收录刊物：CPCI-S

卷号：2018-July

关键字：InGaN/GaN/AlGaN; High voltage RTD; ESD protection; GaN/InGaN-based devices and ICs; United quantum regulation

摘要：A novel high voltage InGaN/GaN/AlGaN RTD was proposed for ESD protection of GaN/InGaN-based devices and ICs. The proposed RTD consists of a sandwiched In0.21Ga0.79N/GaN/In0.14Ga0.86N/Al0.1Ga0.9N DBS structure on a GaN/InGaN substrate with N-original surface. Simulation experiments indicated that the proposed RTD samples are characterized of high forward block voltages at about 7.38 V, low leakage forward currents less than 10(-38) A/mu m(2) and 10(-39) A/mu m(2) and high reverse current densities up to the order of 10(-5) A/mu m(2) at about -2.55 V bias voltage and beyond 10(-4) A/mu m(2) at about -2.8 V bias voltage respectively. Analysis on HBM mode ESD circuits indicated that they can be simplified into ideal one order RC loop. This is because that the resistance of the proposed high voltage (HV) RTD pair at on-state is ignorable relative to discharging resistance RI whether considering its parasitic capacitance or not. As a result, the sample 1 with junction area of 120x120 mu m(2) is large enough to protect the chip from ESD damaging up to +/- 2000 V ESV swash in ideal 840 ns. As for sample 2, its junction area of 380x380 mu m(2) is capable of providing the same strength of ESD protection as that of sample 1. As the parasitic capacitance of sample 2 was considered through analyses of charge variations in emitter region, quantum well region and collector region with bias voltage, the results indicate that the big signal differential parasitic floating capacitance of quantum region is about -0.178/-0.174 pF/cm(2), which is negligible comparing with stand ESV capacitance of HBM mode ESD protection applications. Its function is to shielding the influence of applied voltage on the potential of the quantum well. Its attenuation factor of voltage is not more than -23.6 dB.