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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：清华大学
学位：博士
所在单位：控制科学与工程学院
学科：微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱：dwang121@dlut.edu.cn
Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
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论文类型：期刊论文
发表时间：2016-02-28
发表刊物：APPLIED SURFACE SCIENCE
收录刊物：SCIE、EI、Scopus
卷号：364
页面范围：769-774
ISSN号：0169-4332
关键字：SiC semiconductor; SiO2/SiC interface; Density of interface traps; Surface pretreatment; Surface states
摘要：We proposed an electron cyclotron resonance microwave hydrogen-nitrogen mixed plasma (HNP) pretreatment for 4H-SiC surface combined with post-oxidation annealing (POA) to improve the SiO2/SiC interface properties. Results revealed that HNP surface pretreatment effectively reduced the density of interface traps (D-it), which was closely correlated with interface flattening because of surface flattening, surface state (contaminants, adsorbates, and dangling bonds) reduction, and suppressed generation of interface defects during oxidation. Combined with POA, D-it was further decreased because of passivation of the formed defects after oxidation. The correlation among passivation, SiC surface properties, SiO2/SiC interface properties, and defect levels was established. (C) 2015 Elsevier B.V. All rights reserved.