王德君
个人信息Personal Information
教授
博士生导师
硕士生导师
性别:男
毕业院校:清华大学
学位:博士
所在单位:控制科学与工程学院
学科:微电子学与固体电子学. 凝聚态物理. 控制理论与控制工程
电子邮箱:dwang121@dlut.edu.cn
扫描关注
- [21]He, Miao, Du, Shiyu, 王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[A],International Symposium on Advanced Material Research, ISAMR 2017,2022,753 KEM:134-140
- [22]王德君.First-principles study of advanced nuclear materials: Defect behavior and fission products in U-S...[J],KEY ENGINEERING MATERIALS,2022,753:134-140
- [23]Zhang H.P., Qi R.S., 赵维禄, 章恒丰, 刘国华, 王德君, Niu X.Y., 林茂, Xu L.Y..Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer[A],2011 China-Japan Joint Microwave Conference, CJMW 2011,2022,454-457
- [24]徐善国, 张红平, 王德君, 刘国华, Niu, X. Y., 林茂, Xu, L. Y..Forward Block characteristic of a novel RF SOI LDMOS with a Buried P-type layer[A],International Silicon on Insulator (SOI) Conference,2022
- [25]王德君.Forward Block characteristic of a novel SOI LDMOS with a Buried P-type layer[A],2010 IEEE International SOI Conference,2022,88-89
- [26]王德君.GaN MOSFET with Boron Trichloride-Based Dry Recess Process[A],11th APCPST (Asia Pacific Conference on Plasma Science and Technology),2022,66-66
- [27]Jiang, Y., Wang, Q.P., Tamai, K., Miyashita, T., Motoyama, S., 王德君, Ao, J.P., Ohno.GaN MOSFET with boron trichloride-based dry recess process[J],Journal of physics Conference series,2022,441(1)
- [28]Wang, Qingpeng, Jiang, Ying, Zhang, Jiaqi, Li, Liuan, Kawaharada, Kazuya, 王德君, Ao, Jin-Ping.Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process[J],Applied Physics Express,2022,8(4)
- [29]Zhang Haipeng, 王德君, Geng Lu, Lin Mi, Zhang Zhonghai, Lu Weifeng, Wang Xiaoyuan, 王瑛, 张强, Bai Jianling.High voltage InGaN/GaN/AlGaN RTD suitable for ESD protection applications of GaN/InGaN-based de...[A],2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA),2022,2018-July
- [30]王德君.Device isolation for GaN MOSFETs with boron ion implantation[A],ISPlasma 2013(5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials),2022
- [31]Jiang, Ying, Wang, Qingpeng, Zhang, Fuzhe, Li, Liuan, Shinkai, Satoko, 王德君, Ao, Jin-Ping.Improvement of device isolation using field implantation for GaN MOSFETs[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,31(3)
- [32]王德君.Devices isolation for GaN MOSFETs on AlGaN/GaN heterostructure[A],the 60th JSAP Spring Meeting,2022
- [33]王德君.Effects of Vanadium-compensated Concentration onthe Electrical Characteristics of 6H-SiC Photocon...[A],2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia,2022,1508-1510
- [34]Zhu, Qiaozhi, 秦福文, Li, Wenbo, 王德君.Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitro...[J],APPLIED PHYSICS LETTERS,2022,103(6)
- [35]Wang, Qingpeng, Jiang, Ying, Zhang, Jiaqi, Kawaharada, Kazuya, Li, Liuan, 王德君, Ao, Jin-Ping.Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabrica...[J],SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2022,30(6)
- [36]Li, Wenbo, 赵纪军, Zhu, Qiaozhi, 王德君.Insight into the initial oxidation of 4H-SiC from first-principles thermodynamics[J],Physical review B Condensed matter and materials physics,2022,87(8)
- [37]Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, 秦福文, 王德君.Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Anneali...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,51(8)
- [38]Wang, Qingpeng, Tamai, Kentaro, Miyashita, Takahiro, Motoyama, Shin-Ichi, 王德君, Ao, Jin-Ping, Ohno, Yasuo.Influence of Dry Recess Process on Enhancement-Mode GaN Metal-Oxide-Semiconductor Field-Effect ...[J],JAPANESE JOURNAL OF APPLIED PHYSICS,2022,52(1,SI)
- [39]王德君.Influence of Dry Recess Process on Enhancement-mode GaN MOSFET[A],4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials,2022,54-54
- [40]Huang, Lingqin, 秦福文, Li, Shijuan, 王德君.Effects of surface properties on barrier height and barrier inhomogeneities of platinum contact...[J],APPLIED PHYSICS LETTERS,2022,103(3)