董星龙

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:中国科学院金属研究所

学位:博士

所在单位:材料科学与工程学院

学科:材料物理与化学. 材料学

办公地点:新三束实验室201

联系方式:0411-84706130

电子邮箱:dongxl@dlut.edu.cn

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Interface evolution in the platelet-like SiC@C and SiC@SiO2 monocrystal nanocapsules

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论文类型:期刊论文

发表时间:2017-08-01

发表刊物:NANO RESEARCH

收录刊物:SCIE、EI、Scopus

卷号:10

期号:8

页面范围:2644-2656

ISSN号:1998-0124

关键字:silicon carbide; silicon oxide; nanocapsule; monocrystal; photocatalyst

摘要:Carbon-coated SiC@C nanocapsules (NCs) with a hexagonal platelet-like morphology were fabricated by a simple direct current (DC) arc-discharge plasma method. The SiC@C NCs were monocrystalline, 120-150 nm in size, and approximately 50 nm thick. The formation of the as-prepared SiC@C NCs included nucleation of truncated octahedral SiC seeds and subsequent anisotropic growth of the seeds into hexagonal nanoplatelets in a carbon-rich atmosphere. The disordered carbon layers on the SiC@C NCs were converted into SiO2 shells of SiC@SiO2 NCs by heat treatment at 650 degrees C in air, during which the shape and inherent characteristics of the crystalline SiC core were obtained. The interface evolution from carbon to SiO2 shells endowed the SiC@SiO2 NCs with enhanced photocatalytic activity due to the hydrophilic and transparent nature of the SiO2 shell, as well as to the photosensitive SiC nanocrystals. The band gap of the nanostructured SiC core was determined to be 2.70 eV. The SiC@SiO2 NCs degraded approximately 95% of methylene blue in 160 min under visible light irradiation.