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多维形状记忆合金耗能阻尼器
2019-03-09 Hits:First Author:Hong-Nan Li
Disigner of the Invention:孙彤,Gang Li
Application Number:CN201320732994.7
Authorization Date:2013-11-18
Authorization number:CN203546938U
Authorization Date:2013-11-18
Pre One:一种金属摩擦-屈服阻尼器构造
Next One:框架-支撑摇摆跨结构体系
Gang Li
Gender:Male
Alma Mater:Dalian University of Technology
Main positions:Vice Dean of Faculty of Infrastructure Engineering
Degree:Doctoral Degree
School/Department:School of Civil Engineering
E-Mail:gli@dlut.edu.cn