Huolin Huang, is currently a full professor with the School of Optoelectronic Engineering and Instrument Science, Dalian University of Technology. He was engaged in the research of GaN power electronic devices in the Department of Electrical Engineering (ECE) of the National University of Singapore (NUS) from August 2011 to October 2014. And then he joined the Dalian University of Technology where he currently serves as the director of the power device laboratory. He has published more than 50 academic papers in the  international journals and conferences such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Power Electronics and so on, and also applied for or authorized more than 30 Chinese/US patents in the past 5 years. Now he serves as a Senior Member of the Chinese Electronics Society and a Topical Editor of the Micromachines Journal. His research interests include the fabrication and reliability technique of GaN-based power devices and sensors.

Key journal and conference papers:

[27] N. Sun, H. Huang*, Z. Sun, et al., “Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment,” IEEE Trans. Electron Devices, vol. 69, no. 1, pp. 82-87, 2022 (SCI, IF=2.91, top).

[26] F. Li, R. Wang, H. Huang*, et al., Temperature Dependent Hot Electron Effects and Degradation Mechanisms in 650-V GaN-based MIS-HEMT Power Devices under Hard Switching Operations,  IEEE J. Emerg. Sel. Topics Power Electron., vol. 9, pp. 6424-6431, 2021 ( (5年)IF=6.08, top).

[25] Z. Sun, H. Huang*, et al., A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimental Verification, IEEE Trans. Electron Dev. 68, pp. 299-306, 2021 (SCI, IF=2.91, top).

[24] Z. Sun,  H. Huang*, et al., Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors, J. Phys. D: Appl. Phys., vol. 54, p. 025109, 2021 (SCI, IF=3.21).

[23] H. Huang*, H. Zhang, Y. Cao, et al., High-temperature three-dimensional GaN-based hall sensors for magnetic field detection, J. Phys. D: Appl. Phys., vol. 54, p. 075003, 2021 (SCI, IF=3.21).

[22] Z. Sun, H. Huang*, et al., Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics, IEEE Electron Device Lett. 41, pp. 135-138, 2020 (SCI, IF=4.22, top).

[21] Z. Sun, H. Huang*, et al., A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure, Micromachines, vol. 10, p. 848, 2020 (SCI, IF=2.89).

[20] H. Huang*, Z. Sun, Y. Cao, et al., Investigation of Surface Traps-Induced Current Collapse Phenomenon in AlGaN/GaN High Electron Mobility Transistors with Schottky Gate Structures, J. Phys. D: Appl. Phys., vol. 51, p. 345102, 2018 (SCI, IF=3.21).

[19] H. Huang*, F. Li, Z. Sun, and Y. Cao, Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices, Micromachines, vol. 9, p. 658, 2018 (SCI, IF=2.89).

[18] H. Huang*, Z. Sun, F. Zhang, et al., Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme, Physica E, vol. 108, pp. 197-201, 2019 (SCI, IF=3.57).

[17] H. Huang*, F. Li, Z. Sun, et al., Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Block Layer Structure, Electronics, vol. 8, p. 241, 2019 (SCI, IF=2.41).

[16] H. Huang*, F. Li, Z. Sun, et al., Proposal and Demonstration of GaN-Based Normally-Off Vertical Field-Effect Transistor with a Design of Back Current Block Layer, Key Eng. Mater., vol. 787, pp. 69-73, 2018 (EI).

[15] H. Huang*, Y. Cao, et al., Improved Wide-bandgap Gallium Nitride Hall Sensors for High Temperature Applications, 2019 Collaborative Conference on Materials Research (CCMR), Goyang, South Korea, June 3-7, 2019.

[14] H. Huang*, Z. Sun, et al., Performance-Improved Normally-off AlGaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1230-1232, 2016 (EI).

[13] Z. Sun, H. Huang*, et al., Improved On-Resistance and Breakdown Voltage Vertical GaN-based Field Effect Transistors, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1101-1103, 2016 (EI).

[12] H. Huang*, Z. Sun, Y. Cao, et al., A New Method for Extracting Ohmic Contact Parameters Obtaining the specific contact resistance from transmission line model measurements, 2018 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi'an, pp. 153-156, 2018 (EI).

[11] H. Huang* and Y.C. Liang, "Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices", Solid-State Electron. 114, 148-154, 2015 (SCI, IF=1.44).

[10] H. Huang, Yung C. Liang, Ganesh S. Samudra, Ting-Fu Chang, and Chih-Fang Huang, “Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs”, IEEE Trans. Power Electron. 29, 2164-2173, 2014 (SCI, IF=6.37, top).

[9] H Huang, Yung C. Liang, Ganesh S. Samudra, and Cassandra Low Lee Ngo, “Au-Free Normally-off AlGaN/GaN-on-Si MIS-HEMTs using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures”, IEEE Electron Device Lett. 35, pp. 569-571, 2014 (SCI, IF=4.22, top).

[8] H. Huang*, Y. Xie, et al., “Growth and fabrication of sputtered TiO2 based ultraviolet detectors”, Appl. Surf. Sci. 293, pp. 248-254, 2014, (SCI, IF=6.18, top).

[7] H. Huang, Y. Xie, et al., “Low-Dark-Current TiO2 MSM UV Photodetectors with Pt Schottky Contacts”, IEEE Electron Device Lett. 32, pp. 530-532, 2011 (SCI, IF=4.22, top).

[6] H. Huang*, W. Yang, et al., “Metal-semiconductor-metal ultraviolet photodetectors based on TiO2 films deposited by radio frequency magnetron sputtering”, IEEE Electron Device Lett. 31, pp. 588-590, 2010 (SCI, IF=4.22, top).

[5] H. Huang*, Y.-H. Wang, et al., "Formation of Gate Structure by Multiple Fluorinated Dielectric Layers on Partially Recessed Barrier for High Threshold Voltage AlGaN/GaN Power HEMTs", 11th International Conference on Nitride Semiconductors (ICNS-11), 2015, August 30 - September 4, Beijing, China.

[4] H. Huang, Y.-H. Wang, et al., “5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures”, 46th SSDM 2014, September 8-11, 2014, Ibaraki, Japan.

[3] H. Huang, Y. C. Liang, G. S. Samudra, and C.-F. Huang, “Design of Novel Normally-off AlGaN/GaN HEMTs with Combined Gate Recess and Floating Charge Structures”, IEEE PEDS 2013, April 22-25, 2013, Kitakyushu, Japan.

[2] H. Huang, Y. C. Liang, and G. S. Samudra, “Theoretical Calculation and Efficient Simulations of Power Semiconductor AlGaN/GaN HEMTs”, IEEE EDSSC 2012, December 3-5, 2012, Chulalongkorn University, Bangkok, Thailand.

[1] H. Huang, Y. C. Liang, et al., “Modelling and Simulations on Current Collapse in AlGaN/GaN Power HEMTs”, SISPAD 2012, September 5-7, 2012, Denver, CO, USA.