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论文类型：期刊论文
发表时间：2018-01-01
发表刊物：SUPERLATTICES AND MICROSTRUCTURES
收录刊物：SCIE、EI
卷号：113
页面范围：650-656
ISSN号：0749-6036
关键字：In droplet; InGaN; MBE
摘要：Effect of indium (In) droplets on InGaN thin films grown by molecular beam epitaxy (MBE) has been investigated. The surface of InGaN covered by In droplets shows a smoother topography than that without droplets, indicating that the presence of In droplets is beneficial to the two dimensional growth. Beneath the In droplets, many ring-like structures are observed. The arrangement of these "ring" shows the movement of the In droplets during the InGaN growth. A qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate. Furthermore, the energy dispersive Xray spectroscopy results reveal that the relatively higher In/Ga flux ratio in the region covered by the In droplet results in a locally higher In content. (C) 2017 Elsevier Ltd. All rights reserved.