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论文类型：期刊论文
发表时间：2018-11-01
发表刊物：JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
收录刊物：SCIE
卷号：18
期号：11
页面范围：7468-7472
ISSN号：1533-4880
关键字：InGaN; Microplates; mu-RDS
摘要：InGaN thin film grown under In-rich condition by molecular beam epitaxy has been investigated by reflectance difference spectroscopy microscope. It is observed that InGaN "microplates" are formed just under the circular In droplets after chemical etching. Height fluctuation of those InGaN microplates is well perceived by normal reflectivity images. In addition, reflectance difference images are four-polar distribution patterns in those InGaN microplates, which indicates that the stress fields inside and outside of the microplates are both uniform. A qualitative growth mode is proposed to explain that uniform stress field distribution.