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论文类型：期刊论文
发表时间：2020-04-15
发表刊物：CERAMICS INTERNATIONAL
收录刊物：EI、SCIE
卷号：46
期号：6
页面范围：7298-7305
ISSN号：0272-8842
关键字：Fluorination; Structural; Electronic; Boron nitride nanosheets; FET; P-type conduction
摘要：The structural and electronic transport properties of Fluorine-doped boron nitride nanosheets (F-BNNSs) were investigated in a back-gate assisted field-effect transistor (FET) to exhibit the recognition of excellent p-type conduction because of Fluorine-doping. It was observed that the drain current was modulated by gating and increased significantly with the applied negative gate voltage, suggesting the predomination of holes. Moreover, theoretical calculations predicts, the formation of acceptor states at the fermi-level, supporting experimental results that fluorinated h-BN acts as a P-type semiconductor. Parameter together, with the ON/OFF ratio, resistivity and holes concentration, was additionally retrieved from the I-ds-V-ds curves. Our results suggest that such type of novel device description is a valuable approach to disclose the particular properties of fluorine functionalized BNNSs.