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论文类型：期刊论文

发表时间：2015-08-31

发表刊物：THIN SOLID FILMS

收录刊物：SCIE、EI

卷号：589

页面范围：199-202

ISSN号：0040-6090

关键字：Antimony; Metal organic chemical vapor deposition; p-Type zinc oxide; X-ray photoelectron spectroscopy

摘要：Sb-doped ZnO thin films with different Sb concentrations were grown by varying mole ratio of Sb precursor to Zn precursor during the growth process using metal organic chemical vapor deposition technology. It was found that the valency of Sb changed from Sb3+ to Sb5+ in Sb doped ZnO with increasing mole ratio of Sb precursor to Zn precursor. The p-type ZnO was obtained only for ZnO films with lower mole ratio of Sb precursor. The conductivity type of Sb doped ZnO was changed from p-type to n-type accordingly. These results were suggested that the valency of Sb in ZnO is more important for obtaining p-type Sb doped ZnO thin films. (C) 2015 Published by Elsevier B.V.