骆英民

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工程师

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:集成电路学院

学科:微电子学与固体电子学

办公地点:开发区校区教学楼C区505

联系方式:0411-62273207

电子邮箱:ymluo@dlut.edu.cn

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Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD

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论文类型:期刊论文

发表时间:2016-01-01

发表刊物:RSC ADVANCES

收录刊物:SCIE、EI

卷号:6

期号:65

页面范围:60068-60073

ISSN号:2046-2069

摘要:High-resistivity GaN (HR-GaN) epilayers with an in situ annealed InGaN interlayer were grown by MOCVD technique. Hall-effect measurements show a background carrier concentration as low as 1.0 x 10(12) cm(-3) and a high sheet resistivity of 2.1 x 10(8) Omega per square. Combining the high-resolution X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy characterization, the compensation mechanism through the carbon acceptors impurities induced by increased edge-type threading dislocations (TDs) was demonstrated. Additionally, few increase of the screw TDs density in the HR-GaN epilayers by introducing the annealed InGaN interlayer has been demonstrated, which is beneficial to the device reliability in AlGaN/GaN high electron mobility transistors.