白亦真

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:吉林大学

学位:博士

所在单位:物理学院

电子邮箱:baiyz@dlut.edu.cn

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Bias effects on AlMgB thin films prepared by magnetron sputtering

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论文类型:期刊论文

发表时间:2017-08-03

发表刊物:SURFACE ENGINEERING

收录刊物:SCIE、EI、Scopus

卷号:33

期号:8

页面范围:592-596

ISSN号:0267-0844

关键字:AlMgB thin films; Magnetron sputtering; Negative bias voltage; Thickness; Hardness

摘要:AlMgB thin filmswere deposited on silicon (100) substrate using a three- target magnetron sputtering system in argon atmosphere. The influence of negative bias voltage on the thickness, morphology, microstructure, local bonding and hardness of the deposited films was investigated. Experimental results show that all films are X-ray amorphous, and the properties of the deposited films have a strong dependence on the applied substrate's negative bias voltage. Deposited at high negative bias voltage, the AlMgB thin films are found to be generally dense, having a smooth surface and containing more well-formed B-12 icosahedra, which consequently increase the hardness of the deposited films. However, deposited at low negative bias voltage, the AlMgB thin films exhibit loose structure, coarse surface and contain few B12 icosahedra. It is shown that the hardness of the dense and smooth AlMgB thin films can reach 22 GPa at the negative bias voltage of 400 V.