点击次数：

论文类型： 期刊论文

第一作者： Guo, Yu

通讯作者： Zhou, S (reprint author), Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China.

合写作者： Zhou, Si,Bai, Yizhen,Zhao, Jijun

发表时间： 2016-03-01

发表刊物： JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM

收录刊物： SCIE、EI

卷号： 29

期号： 3

页面范围： 717-720

ISSN号： 1557-1939

关键字： Silicene; First principles; Phonon; Thermal conductivity; Doping

摘要： Silicene possesses excellent electronic properties and low thermal conductivity and hence is a potential material for thermoelectric applications. The key to improve the thermoelectric efficiency of silicene relies on opening a bandgap to enhance the thermopower and suppressing the lattice thermal conductivity. Based on first-principle calculations, we propose germanium doping as an effective way to tailor the thermal conductivity of silicene. The electronic transport properties of silicene is not affected by Ge doping, while the room-temperature thermal conductivity is significantly reduced by 62 % for a doping concentration of 6 %. The depression of phonon transport is attributed to the low-frequency phonon softening and enhanced phonon scattering by Ge doping. Our theoretical results will be beneficial for experimental modulating the thermal and thermoelectric properties of silicene and many other two-dimensional materials.