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Indexed by:Journal Papers

First Author:Cai, Haitao

Correspondence Author:Zhu, HC (reprint author), Dalian Univ Technol, Sch Elect Sci & Technol, Key Lab Integrated Circuits Technol Liaoning Prov, Dalian 116024, Peoples R China.

Co-author:Liu, Hang,Zhu, Huichao,Shao, Pai,Hou, Changmin

Date of Publication:2015-08-01

Journal:MATERIALS

Included Journals:SCIE、EI、PubMed、Scopus

Volume:8

Issue:8

Page Number:5313-5320

ISSN No.:1996-1944

Key Words:Ga2O3; nanobelt; capacitive behavior; impedance analysis

Abstract:In this research, monocrystalline gallium oxide (Ga2O3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga2O3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga2O3 nanobelt, indicating the existence of capacitive elements in the Pt/Ga2O3/Pt structure.