陈宗宁

个人信息Personal Information

教授

博士生导师

硕士生导师

任职 : 大连理工大学宁波研究院

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:材料科学与工程学院

学科:材料加工工程

办公地点:大连理工大学主校区铸造中心401室
宁波市江北区育才路26号大连理工大学宁波研究院

电子邮箱:znchen@dlut.edu.cn

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Enhanced Thermoelectric Performance of Zr1-xTaxNiSn Half-Heusler Alloys by Diagonal-Rule Doping

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论文类型:期刊论文

发表时间:2020-01-22

发表刊物:ACS APPLIED MATERIALS & INTERFACES

收录刊物:PubMed、EI、SCIE

卷号:12

期号:3

页面范围:3773-3783

ISSN号:1944-8244

关键字:thermoelectric; half-Heusler alloys; electrical conductivity; lattice thermal conductivity; doping

摘要:Although Sb doping is regarded as the most effective method to regulate the carrier concentration within the optimum range for ZrNiSn-based half-Heusler (HH) alloys, the resulting thermal conductivity remains high. Hence, the aim of this study was to investigate the effect of "diagonal-rule" doping; that is, the Zr site was displaced by Ta, which can simultaneously enhance the electrical conductivity and reduce the lattice thermal conductivity. The solid-solubility limit of Ta in the ZrNiSn matrix was determined to be x = 0.04. The highest ZT, 0.72, was achieved at 923 K for Zr0.98Ta0.02NiSn. In addition, ZT(avg) increased by 10.2% for Zr0.98Ta0.02NiSn compared with that for ZrNiSn0.99Sb0.01 at 873 K, which was mainly attributed to the reduced lattice thermal conductivity of Zr0.98Ta0.02NiSn. These results suggest that Ta doping is more effective than Sb doping in ZrNiSn-based HH alloys. In addition, the microhardness of Zr1-xTaxNiSn was substantially improved with increasing Ta content and was also much higher than that of other traditional thermoelectric materials.