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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2010-12-01

发表刊物：JOURNAL OF MICROELECTROMECHANICAL SYSTEMS

收录刊物：Scopus、SCIE、EI

卷号：19

期号：6

页面范围：1521-1523

ISSN号：1057-7157

关键字：Dielectric constant; mechanical stress; micromachining; silicon dioxide; test structure

摘要：The effect of mechanical stress on the dielectric constant of SiO(2) is experimentally studied. A beam-bending method is used to extract the strain effect coefficient M(12). According to the measurements, the dielectric constant changes linearly with the stress. The value of M(12) is shown to be -(0.19 +/- 0.01) x 10(-21) m(2)/V(2). The mechanism underlying the phenomena is discussed.