论文类型：期刊论文
发表时间：2010-12-01
发表刊物：JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
收录刊物：EI、SCIE、Scopus
卷号：19
期号：6
页面范围：1521-1523
ISSN号：1057-7157
关键字：Dielectric constant; mechanical stress; micromachining; silicon dioxide; test structure
摘要：The effect of mechanical stress on the dielectric constant of SiO(2) is experimentally studied. A beam-bending method is used to extract the strain effect coefficient M(12). According to the measurements, the dielectric constant changes linearly with the stress. The value of M(12) is shown to be -(0.19 +/- 0.01) x 10(-21) m(2)/V(2). The mechanism underlying the phenomena is discussed.
