点击次数：

发布时间：2019-03-09

论文类型：期刊论文

发表时间：2009-08-23

发表刊物：FERROELECTRICS

收录刊物：Scopus、EI、SCIE

卷号：405

期号：1

页面范围：255-261

ISSN号：0015-0193

关键字：PSZT thin films; Sr-doped; dielectric properties; leakage current; P-E hysteresis loops

摘要：Pb1-xSrx (Zr0.53Ti0.47) O3 (PSZT) thin films with different x values (x= 0, 0.02, 0.04, 0.06) are prepared by sol-gel method and their properties are studied. All PSZT thin films get a single perovskite phase. The dielectric properties are studied. The leakage current density at an applied electric field of 61.2 kV/cm is 293.0 x 10-9A/cm2 when x= 0.04. The remanent polarization and coercive field values of the PSZT (x = 0) thin film are 8.4C/cm2 and 67.5kV/cm, respectively.