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Indexed by:期刊论文

Date of Publication:2013-09-01

Journal:Gaodianya Jishu/High Voltage Engineering

Included Journals:EI、PKU、ISTIC、Scopus

Volume:39

Issue:9

Page Number:2228-2234

ISSN No.:10036520

Abstract:To improve the microcrystalline silicon thin film deposition in quality and to increase its microcrystalline silicon content, we numerically investigated the characteristics of homogeneous discharges in hydrogen diluted silane and argon mixed gases at atmospheric pressure using a two-dimensional fluid model. The model takes into account the primary processes of excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges, so this model can adequately describe the discharge plasma. The effects of very high frequency (VHF) excitation on the electron density in such discharges are analyzed. The simulation results show that the electron density does not linearly vary with the excitation frequency within from 90 MHz to 150 MHz. The maximum value occurs at an appropriate excitation frequency i.e. called the transition frequency. Increase of the excitation frequency would effectively increase the electron density before the transition frequency, but decreases the density afterwards. The electron density is very important for the film growth. Moreover, the densities of involved particle species, including H2+, H, Ar*, Ar+, SiH3+, SiH3-, SiH3, SiH2 are closely interrelated.