Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2012-12-01

Journal: PLASMA SCIENCE & TECHNOLOGY

Included Journals: EI、SCIE、Scopus

Volume: 14

Issue: 12

Page Number: 1106-1109

ISSN: 1009-0630

Key Words: plasma; numerical simulation; hydrogen dilution

Abstract: The characteristics of homogeneous discharges in mixed gases of hydrogen diluted silane and argon at atmospheric pressure are investigated numerically based on a one-dimensional fluid model. This model takes into account the primary processes excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges and therefore, can adequately represent the discharge plasma. We analyze the effects of very high frequency (VHF) on the densities of species (e, H, SiH3, SiH3+ and SiH2) in such discharges using the model. The simulation results show that the densities of SiH3, SiH3+, H, and SiH2 increase with VHF when the VHF ranges from 30 MHz to 150 MHz. It is found that the deposition rate of mu c-Si:H film depends on the concentration of SiH3, SiH3+, SiH2, and H in the plasma. The effects of VHF on the deposition rate and the amount of crystallized fraction for,u,c-Si:H film growth is also discussed in this paper.