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发表时间：2007-01-01

发表刊物：光学学报

期号：7

页面范围：1322-1326

ISSN号：0253-2239

摘要：The Yb-Er co-doped Al2O3 films were prepared by the microwave electron cyclotron resonance plasma source enhanced RF sputtering and annealed by CO2 laser. The influence on the surface morphology and the annealing uniformity of the films was discussed by adjusting different annealing parameters. The area within 8 mm radius was annealed uniformly when films were at treble focus of the attenuation lens. The morphology of films, whether annealed or non-annealed, has little difference if annealing time was selected less than 32 s. Furthermore, the photoluminescence characteristics of two kinds of films annealed by laser annealing and thermal annealing respectively were measured and compared. The results show that the photoluminescence (PL) peak intensity of the films annealed by laser is decuple more than that of the films annealed by thermal method, and the photoluminescence peak intensity of the latter appears saturated, even descent while the pump power goes on. The photoluminescence peak intensity of the former, however, increases monotonously with approximate linearity. The threshold annealing power is 5 W and the optimum annealing power is 20 W.

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