Hits:

Indexed by:期刊论文

Date of Publication:2011-03-01

Journal:TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA

Included Journals:SCIE、EI、ISTIC

Volume:21

Issue:SUPPL. 1

Page Number:S188-S193

ISSN No.:1003-6326

Key Words:laser bending; silicon sheet; pulsed laser; simulation

Abstract:The laser bending of single-crystal silicon sheet (0.2 mm in thickness) was investigated with JK701 Nd:YAG laser. The models were developed to describe the beam characteristics of pulsed laser. In order to simulate the process of laser bending, the FEM software ANSYS was used to predict the heat temperature and stress-strain fields. The periodic transformation of temperature field and stress-strain distribution was analyzed during pulsed laser scanning silicon sheet. The results indicate that the mechanism of pulsed laser bending silicon is a hybrid mechanism in silicon bending, rather than a simple mechanism of TGM or BM. This work also gets silicon sheet bent after scanning 6 times with pulsed laser, and its bending angle is up to 6.5 degrees. The simulation and prediction results reach well agreement with the verifying experiments.