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论文类型：会议论文

发表时间：2010-01-01

收录刊物：CPCI-S

卷号：1315

页面范围：1588-+

关键字：Laser cleaning; fine particle; silicon wafer

摘要：Laser cleaning of Al2O3 fine particles/100nm in diameter, which are the main contaminants of silicon wafer lapping and polishing solutions used in industry, from silicon wafers was studied for determining laser energy for high efficient particle removal while not causing damage to the wafers. As the cleaning force is generated from laser-energy absorption of the wafer, from which cleaning force exerting on the particles greater than the adhesion force between the particle and the substrate, but less than the wafer damage energy of laser input was determined. Calculations of the laser energy values for both particle cleaning and wafer damage were conducted for silicon wafers of 200 mm in diameter and 0.2 mm in thickness, and they were found to be about 70mJ/cm2 and 310mJ/cm(2), respectively. The laser energy model was finally verified experimentally using a KrF Excimer laser and found to be in good agreement with the experimental data. With the cleaning parameters from the model, the cleaning efficiency of as high as 99% has been achieved.