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论文类型：期刊论文

发表时间：2010-08-01

发表刊物：PLASMA SCIENCE & TECHNOLOGY

收录刊物：SCIE、EI

卷号：12

期号：4

页面范围：461-465

ISSN号：1009-0630

关键字：PECVD; diamond-like carbon (DLC); Si/SiC intermediate layers; stainless steel substrates

摘要：Diamond-like carbon (DLC) films was deposited successfully on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced unbalanced magnetron sputtering physical vapor deposition (PEUMS-PVD) and microwave electron cyclotron resonance plasma enhanced chemical vapor deposition (MW-ECRPECVD) techniques. The effect of silicon dopant on the structure, morphology, nano mechanical properties and electrochemical behavior of DLC films were investigated by Raman spectroscopy, nano-indentation, atomic force microscopy (AFM) and potentiodynamic method and electrochemical impedance spectroscopy (EIS). It showed that the incorporated silicon atoms substituted sp(2)-bonded carbon atoms in the ring structures, promoting the formation of sp(3)-bonds. The structural transition from C-C to C-Si bonds resulted in the relaxation of the residual stress, leading to the decrease in films hardness. The DLC films with Si/SiC intermediate layers led to significant improvement in the corrosion resistance of the stainless steel substrate due to effective isolation and good chemical inertness of the DLC films.