Release Time:2019-03-11  Hits:

Indexed by: Journal Article

Date of Publication: 2010-09-19

Journal: Advanced Materials Research

Included Journals: Scopus、CPCI-S、EI

Volume: 126-128

Page Number: 113-118

ISSN: 9780878492428

Key Words: Silicon wafer; Grinding; Subsurface damage; Diamond grinding wheel

Abstract: Using the cross-section angle polishing microscopy, the subsurface damage of the silicon wafers (100) ground by the diamond wheels with different grain size were investigated, and subsurface damage distributions in different crystal orientations and radial locations of the silicon wafers (100) were analyzed. The experiment results showed that the grain size of diamond wheel has great influence on the subsurface damage depth of the ground wafer. On the ground wafer without spark-out process, the subsurface damage depth increased along the radical direction from the centre to the edge and the subsurface damage depth in < 110 > crystal orientation was larger than that in < 100 > crystal orientation; but on the ground wafer with spark-out process, the subsurface damage depth in different crystal oriental:ions and radial locations become uniform.